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Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profile...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6639536/ https://www.ncbi.nlm.nih.gov/pubmed/31320716 http://dx.doi.org/10.1038/s41598-019-46986-z |