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Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature

We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profile...

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Detalles Bibliográficos
Autores principales:	Nguyen, Hieu T., Li, Zhuofeng, Han, Young-Joon, Basnet, Rabin, Tebyetekerwa, Mike, Truong, Thien N., Wu, Huiting, Yan, Di, Macdonald, Daniel
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6639536/ https://www.ncbi.nlm.nih.gov/pubmed/31320716 http://dx.doi.org/10.1038/s41598-019-46986-z

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