Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors

[Image: see text] It is well-known that the improvement in the performance of organic field-effect transistors (OFETs) relies primarily on growth properties of organic molecules on gate dielectrics, their interface behavior, and on understanding the physical processes occurring during device operati...

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Detalles Bibliográficos
Autores principales: Vasimalla, Suresh, Subbarao, Nimmakayala V. V., Gedda, Murali, Goswami, Dipak K., Iyer, Parameswar Krishnan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641061/
https://www.ncbi.nlm.nih.gov/pubmed/31457599
http://dx.doi.org/10.1021/acsomega.7b00374

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641061/
https://www.ncbi.nlm.nih.gov/pubmed/31457599
http://dx.doi.org/10.1021/acsomega.7b00374

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