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Topological Insulator in Two-Dimensional SiGe Induced by Biaxial Tensile Strain
[Image: see text] Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains dynamically...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641324/ https://www.ncbi.nlm.nih.gov/pubmed/31457874 http://dx.doi.org/10.1021/acsomega.7b01957 |