Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires

[Image: see text] Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various p...

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Detalles Bibliográficos
Autores principales: Im, Hyung Soon, Park, Kidong, Kim, Jundong, Kim, Doyeon, Lee, Jinha, Lee, Jung Ah, Park, Jeunghee, Ahn, Jae-Pyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641494/
https://www.ncbi.nlm.nih.gov/pubmed/31458573
http://dx.doi.org/10.1021/acsomega.8b00063

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641494/
https://www.ncbi.nlm.nih.gov/pubmed/31458573
http://dx.doi.org/10.1021/acsomega.8b00063

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