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Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires
[Image: see text] Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various p...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641494/ https://www.ncbi.nlm.nih.gov/pubmed/31458573 http://dx.doi.org/10.1021/acsomega.8b00063 |