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Atomic Structure and Dynamics of Defects in 2D MoS(2) Bilayers

[Image: see text] We present a detailed atomic-level study of defects in bilayer MoS(2) using aberration-corrected transmission electron microscopy at an 80 kV accelerating voltage. Sulfur vacancies are found in both the top and bottom layers in 2H- and 3R-stacked MoS(2) bilayers. In 3R-stacked bila...

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Detalles Bibliográficos
Autores principales: Zhou, Si, Wang, Shanshan, Li, Huashan, Xu, Wenshuo, Gong, Chuncheng, Grossman, Jeffrey C., Warner, Jamie H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641595/
https://www.ncbi.nlm.nih.gov/pubmed/31457656
http://dx.doi.org/10.1021/acsomega.7b00734