Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment

[Image: see text] GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed...

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Detalles Bibliográficos
Autores principales: Fang, Xuan, Wei, Zhipeng, Fang, Dan, Chu, Xueying, Tang, Jilong, Wang, Dengkui, Wang, Xinwei, Li, Jinhua, Li, Yongfeng, Yao, Bin, Wang, Xiaohua, Chen, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641701/
https://www.ncbi.nlm.nih.gov/pubmed/31458667
http://dx.doi.org/10.1021/acsomega.7b01783

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641701/
https://www.ncbi.nlm.nih.gov/pubmed/31458667
http://dx.doi.org/10.1021/acsomega.7b01783

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