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Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment
[Image: see text] GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641701/ https://www.ncbi.nlm.nih.gov/pubmed/31458667 http://dx.doi.org/10.1021/acsomega.7b01783 |