Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism

[Image: see text] We demonstrate controlled fabrication of porous Si (PS) and vertically aligned silicon nanowires array starting from bulk silicon wafer by simple chemical etching method, and the underlying mechanism of nanostructure formation is presented. Silicon-oxidation rate and the electron-s...

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Detalles Bibliográficos
Autores principales: Rajkumar, Kanakaraj, Pandian, Ramanathaswamy, Sankarakumar, Amirthapandian, Rajendra Kumar, Ramasamy Thangavelu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641903/
https://www.ncbi.nlm.nih.gov/pubmed/31457746
http://dx.doi.org/10.1021/acsomega.7b00584

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641903/
https://www.ncbi.nlm.nih.gov/pubmed/31457746
http://dx.doi.org/10.1021/acsomega.7b00584

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