Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

Understanding the remarkable excitonic effects and controlling the exciton binding energies in two-dimensional (2D) semiconductors are crucial in unlocking their full potential for use in future photonic and optoelectronic devices. Here, we demonstrate large excitonic effects and gate-tunable excito...

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Detalles Bibliográficos
Autores principales: Qiu, Zhizhan, Trushin, Maxim, Fang, Hanyan, Verzhbitskiy, Ivan, Gao, Shiyuan, Laksono, Evan, Yang, Ming, Lyu, Pin, Li, Jing, Su, Jie, Telychko, Mykola, Watanabe, Kenji, Taniguchi, Takashi, Wu, Jishan, Neto, A. H. Castro, Yang, Li, Eda, Goki, Adam, Shaffique, Lu, Jiong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641939/
https://www.ncbi.nlm.nih.gov/pubmed/31334350
http://dx.doi.org/10.1126/sciadv.aaw2347

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6641939/
https://www.ncbi.nlm.nih.gov/pubmed/31334350
http://dx.doi.org/10.1126/sciadv.aaw2347

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