Improved electrical performance of a sol–gel IGZO transistor with high-k Al(2)O(3) gate dielectric achieved by post annealing

We have explored the effect of post-annealing on the electrical properties of an indium gallium zinc oxide (IGZO) transistor with an Al(2)O(3) bottom gate dielectric, formed by a sol–gel process. The post-annealed IGZO device demonstrated improved electrical performance in terms of threshold variati...

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Detalles Bibliográficos
Autores principales: Lee, Esther, Kim, Tae Hyeon, Lee, Seung Won, Kim, Jee Hoon, Kim, Jaeun, Jeong, Tae Gun, Ahn, Ji-Hoon, Cho, Byungjin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2019
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643007/
https://www.ncbi.nlm.nih.gov/pubmed/31328241
http://dx.doi.org/10.1186/s40580-019-0194-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643007/
https://www.ncbi.nlm.nih.gov/pubmed/31328241
http://dx.doi.org/10.1186/s40580-019-0194-1

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