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Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
[Image: see text] We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown w...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6643550/ https://www.ncbi.nlm.nih.gov/pubmed/31458215 http://dx.doi.org/10.1021/acsomega.8b02359 |