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Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb(2)Te(3) Superlattices
[Image: see text] Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is currently a key element of various electronics and portable systems. An important step in the development of conceptually new devices is the class of van der Waals (vdW)-bonded GeTe/Sb(2)Te(3) superl...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2017
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644333/ https://www.ncbi.nlm.nih.gov/pubmed/31457867 http://dx.doi.org/10.1021/acsomega.7b00812 |