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Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb(2)Te(3) Superlattices

[Image: see text] Nonvolatile memory, of which phase-change memory (PCM) is a leading technology, is currently a key element of various electronics and portable systems. An important step in the development of conceptually new devices is the class of van der Waals (vdW)-bonded GeTe/Sb(2)Te(3) superl...

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Detalles Bibliográficos
Autores principales: Kolobov, Alexander V., Fons, Paul, Saito, Yuta, Tominaga, Junji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644333/
https://www.ncbi.nlm.nih.gov/pubmed/31457867
http://dx.doi.org/10.1021/acsomega.7b00812

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