First-Principles Study on the Thermoelectric Properties of FeAsS

[Image: see text] The electronic structure and thermoelectric properties of FeAsS are studied by the first-principles and the Boltzmann transport theory. The results show that FeAsS is a semiconductor with an indirect band gap of 0.73 eV. The dimensionless figure of merit (ZT) has obvious anisotropy...

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Detalles Bibliográficos
Autores principales: Zhu, Lin, Jiang, Xia, Gao, Guoying, Fu, Huahua, Yao, Kailun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644735/
https://www.ncbi.nlm.nih.gov/pubmed/31458068
http://dx.doi.org/10.1021/acsomega.8b02042

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644735/
https://www.ncbi.nlm.nih.gov/pubmed/31458068
http://dx.doi.org/10.1021/acsomega.8b02042

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