Post-thermal-Induced Recrystallization in GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry

[Image: see text] Here, we investigate the stoichiometry control of GaAs/Al(0.3)Ga(0.7)As droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown “strain-free” QDs using state-of-the-art atomic-scale energy-dispersive X-ray s...

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Detalles Bibliográficos
Autores principales: Yeo, Inah, Yi, Kyung Soo, Lee, Eun Hye, Song, Jin Dong, Kim, Jong Su, Han, Il Ki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644783/
https://www.ncbi.nlm.nih.gov/pubmed/31458998
http://dx.doi.org/10.1021/acsomega.8b01078

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644783/
https://www.ncbi.nlm.nih.gov/pubmed/31458998
http://dx.doi.org/10.1021/acsomega.8b01078

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