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Post-thermal-Induced Recrystallization in GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry
[Image: see text] Here, we investigate the stoichiometry control of GaAs/Al(0.3)Ga(0.7)As droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown “strain-free” QDs using state-of-the-art atomic-scale energy-dispersive X-ray s...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644783/ https://www.ncbi.nlm.nih.gov/pubmed/31458998 http://dx.doi.org/10.1021/acsomega.8b01078 |