Variability Improvement of TiO(x)/Al(2)O(3) Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al(2)O(3) Dielectric Material

[Image: see text] Variability control over the resistive switching process is one of the key requirements to improve the performance stability of the resistive random access memory (RRAM) devices. In this study, we show the improvement of the variability of the resistive switching operation in the T...

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Detalles Bibliográficos
Autores principales: Banerjee, Writam, Xu, Xiaoxin, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644850/
https://www.ncbi.nlm.nih.gov/pubmed/31457275
http://dx.doi.org/10.1021/acsomega.7b01211

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644850/
https://www.ncbi.nlm.nih.gov/pubmed/31457275
http://dx.doi.org/10.1021/acsomega.7b01211

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