Memristors Using Solution-Based IGZO Nanoparticles

[Image: see text] Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low...

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Detalles Bibliográficos
Autores principales: Rosa, Jose, Kiazadeh, Asal, Santos, Lídia, Deuermeier, Jonas, Martins, Rodrigo, Gomes, Henrique Leonel, Fortunato, Elvira
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644988/
https://www.ncbi.nlm.nih.gov/pubmed/31457375
http://dx.doi.org/10.1021/acsomega.7b01167

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6644988/
https://www.ncbi.nlm.nih.gov/pubmed/31457375
http://dx.doi.org/10.1021/acsomega.7b01167

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