Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells

[Image: see text] Si nanowires (SiNWs) produced by metal-assisted chemical etching on n-type Si were investigated for their use as a light-trapping material in c-Si solar cells. The nanowires were fabricated before junction formation (on a lightly doped Si substrate) so that their core was bulk and...

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Detalles Bibliográficos
Autores principales: Leontis, Ioannis, Botzakaki, Martha A., Georga, Stavroula N., Nassiopoulou, A. Galiouna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2018
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645058/
https://www.ncbi.nlm.nih.gov/pubmed/31459200
http://dx.doi.org/10.1021/acsomega.8b01049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645058/
https://www.ncbi.nlm.nih.gov/pubmed/31459200
http://dx.doi.org/10.1021/acsomega.8b01049

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