β-Ga(2)O(3) Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications

[Image: see text] Steep-slope β-Ga(2)O(3) nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse...

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Detalles Bibliográficos
Autores principales: Si, Mengwei, Yang, Lingming, Zhou, Hong, Ye, Peide D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645059/
https://www.ncbi.nlm.nih.gov/pubmed/31457293
http://dx.doi.org/10.1021/acsomega.7b01289

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645059/
https://www.ncbi.nlm.nih.gov/pubmed/31457293
http://dx.doi.org/10.1021/acsomega.7b01289

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