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Formation Mechanism of Secondary Electron Contrast of Graphene Layers on a Metal Substrate
[Image: see text] Scanning electron microscopy (SEM) is widely used to observe graphene on metal substrates. However, the origin of the SEM image contrast of graphene is not well understood. In this work, we performed in situ SEM imaging of layer-number-controlled graphene on a Ni substrate using a...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical
Society
2017
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645151/ https://www.ncbi.nlm.nih.gov/pubmed/31457340 http://dx.doi.org/10.1021/acsomega.7b01550 |
Sumario: | [Image: see text] Scanning electron microscopy (SEM) is widely used to observe graphene on metal substrates. However, the origin of the SEM image contrast of graphene is not well understood. In this work, we performed in situ SEM imaging of layer-number-controlled graphene on a Ni substrate using a high-pass energy filter for secondary electrons. We found that the graphene layer contrast was maximized at 15–20 eV, corresponding to the π–σ* interband transition in graphene. Our results indicate that the SEM image of graphene is produced by attenuation of the electrons emitted from the metal substrate by the monoatomic layers of graphene. |
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