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Thermodynamic Studies of β-Ga(2)O(3) Nanomembrane Field-Effect Transistors on a Sapphire Substrate

[Image: see text] The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-h...

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Detalles Bibliográficos
Autores principales: Zhou, Hong, Maize, Kerry, Noh, Jinhyun, Shakouri, Ali, Ye, Peide D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6645553/
https://www.ncbi.nlm.nih.gov/pubmed/31457329
http://dx.doi.org/10.1021/acsomega.7b01313