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Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown...

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Detalles Bibliográficos
Autores principales: Lee, Seung Hee, Jeong, Hokyeong, Okello, Odongo Francis Ngome, Xiao, Shiyu, Moon, Seokho, Kim, Dong Yeong, Kim, Gi-Yeop, Lo, Jen-Iu, Peng, Yu-Chain, Cheng, Bing-Ming, Miyake, Hideto, Choi, Si-Young, Kim, Jong Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6646322/
https://www.ncbi.nlm.nih.gov/pubmed/31332250
http://dx.doi.org/10.1038/s41598-019-47093-9
Descripción
Sumario:Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.