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Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing

Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown...

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Autores principales: Lee, Seung Hee, Jeong, Hokyeong, Okello, Odongo Francis Ngome, Xiao, Shiyu, Moon, Seokho, Kim, Dong Yeong, Kim, Gi-Yeop, Lo, Jen-Iu, Peng, Yu-Chain, Cheng, Bing-Ming, Miyake, Hideto, Choi, Si-Young, Kim, Jong Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6646322/
https://www.ncbi.nlm.nih.gov/pubmed/31332250
http://dx.doi.org/10.1038/s41598-019-47093-9
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author Lee, Seung Hee
Jeong, Hokyeong
Okello, Odongo Francis Ngome
Xiao, Shiyu
Moon, Seokho
Kim, Dong Yeong
Kim, Gi-Yeop
Lo, Jen-Iu
Peng, Yu-Chain
Cheng, Bing-Ming
Miyake, Hideto
Choi, Si-Young
Kim, Jong Kyu
author_facet Lee, Seung Hee
Jeong, Hokyeong
Okello, Odongo Francis Ngome
Xiao, Shiyu
Moon, Seokho
Kim, Dong Yeong
Kim, Gi-Yeop
Lo, Jen-Iu
Peng, Yu-Chain
Cheng, Bing-Ming
Miyake, Hideto
Choi, Si-Young
Kim, Jong Kyu
author_sort Lee, Seung Hee
collection PubMed
description Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
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spelling pubmed-66463222019-07-29 Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing Lee, Seung Hee Jeong, Hokyeong Okello, Odongo Francis Ngome Xiao, Shiyu Moon, Seokho Kim, Dong Yeong Kim, Gi-Yeop Lo, Jen-Iu Peng, Yu-Chain Cheng, Bing-Ming Miyake, Hideto Choi, Si-Young Kim, Jong Kyu Sci Rep Article Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics. Nature Publishing Group UK 2019-07-22 /pmc/articles/PMC6646322/ /pubmed/31332250 http://dx.doi.org/10.1038/s41598-019-47093-9 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Lee, Seung Hee
Jeong, Hokyeong
Okello, Odongo Francis Ngome
Xiao, Shiyu
Moon, Seokho
Kim, Dong Yeong
Kim, Gi-Yeop
Lo, Jen-Iu
Peng, Yu-Chain
Cheng, Bing-Ming
Miyake, Hideto
Choi, Si-Young
Kim, Jong Kyu
Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title_full Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title_fullStr Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title_full_unstemmed Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title_short Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
title_sort improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6646322/
https://www.ncbi.nlm.nih.gov/pubmed/31332250
http://dx.doi.org/10.1038/s41598-019-47093-9
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