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Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory
[Image: see text] In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass su...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6647943/ https://www.ncbi.nlm.nih.gov/pubmed/31459636 http://dx.doi.org/10.1021/acsomega.8b03301 |