Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices

[Image: see text] There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although highly Si-doped n-GaAs...

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Detalles Bibliográficos
Autores principales: Mano, Takaaki, Miyazaki, Hideki T., Kasaya, Takeshi, Noda, Takeshi, Sakuma, Yoshiki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648010/
https://www.ncbi.nlm.nih.gov/pubmed/31459829
http://dx.doi.org/10.1021/acsomega.8b03260

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648010/
https://www.ncbi.nlm.nih.gov/pubmed/31459829
http://dx.doi.org/10.1021/acsomega.8b03260

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