Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices

[Image: see text] There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although highly Si-doped n-GaAs surfaces can allow an ohmic contact without alloying, conditions for realizing nonalloyed ohmic contacts to other n-GaAs surfaces, originally buried inside but exposed by removing the substrate, have yet to be studied. We discovered that nonalloyed ohmic contacts to initially buried surfaces with a practically low contact resistivity down to 77 K can be realized by fulfilling certain requirements, specifically keeping the Si-doping concentration within a narrow range of 7.5 × 10(18) to 1.25 × 10(19) cm(–3) and setting the growth temperature of the succeeding upper layers to a low value of 530 °C.