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Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices
[Image: see text] There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although highly Si-doped n-GaAs...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648010/ https://www.ncbi.nlm.nih.gov/pubmed/31459829 http://dx.doi.org/10.1021/acsomega.8b03260 |