Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition

[Image: see text] The characteristics of copper (Cu) isotropic dry etching using a hydrogen-based plasma generated at 13.3 kPa (100 Torr) were improved dramatically by simply introducing a moderate amount of N(2) gas into the process atmosphere. A maximum Cu etch rate of 2.4 μm/min was obtained by n...

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Detalles Bibliográficos
Autores principales: Ohmi, Hiromasa, Sato, Jumpei, Shirasu, Yoshiki, Hirano, Tatsuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648018/
https://www.ncbi.nlm.nih.gov/pubmed/31459637
http://dx.doi.org/10.1021/acsomega.8b03163

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648018/
https://www.ncbi.nlm.nih.gov/pubmed/31459637
http://dx.doi.org/10.1021/acsomega.8b03163

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