Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH(3) and Selective Deposition on Defects of Graphene

[Image: see text] Atomic layer deposition (ALD) of Ni was demonstrated by introducing a novel oxygen-free heteroleptic Ni precursor, (η(3)-cyclohexenyl)(η(5)-cyclopentadienyl)nickel(II) [Ni(Chex)(Cp)]. For this process, non-oxygen-containing reactants (NH(3) and H(2) molecules) were used within a de...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Minsu, Nabeya, Shunichi, Nandi, Dip K., Suzuki, Kazuharu, Kim, Hyun-Mi, Cho, Seong-Yong, Kim, Ki-Bum, Kim, Soo-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648170/
https://www.ncbi.nlm.nih.gov/pubmed/31460211
http://dx.doi.org/10.1021/acsomega.9b01003

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648170/
https://www.ncbi.nlm.nih.gov/pubmed/31460211
http://dx.doi.org/10.1021/acsomega.9b01003

Ejemplares similares