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Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH(3) and Selective Deposition on Defects of Graphene

[Image: see text] Atomic layer deposition (ALD) of Ni was demonstrated by introducing a novel oxygen-free heteroleptic Ni precursor, (η(3)-cyclohexenyl)(η(5)-cyclopentadienyl)nickel(II) [Ni(Chex)(Cp)]. For this process, non-oxygen-containing reactants (NH(3) and H(2) molecules) were used within a de...

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Detalles Bibliográficos
Autores principales:	Kim, Minsu, Nabeya, Shunichi, Nandi, Dip K., Suzuki, Kazuharu, Kim, Hyun-Mi, Cho, Seong-Yong, Kim, Ki-Bum, Kim, Soo-Hyun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2019
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648170/ https://www.ncbi.nlm.nih.gov/pubmed/31460211 http://dx.doi.org/10.1021/acsomega.9b01003

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