Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

[Image: see text] We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more standard devices fabricated on SiO(...

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Detalles Bibliográficos
Autores principales: Nathawat, Jubin, Zhao, Miao, Kwan, Chun-Pui, Yin, Shenchu, Arabchigavkani, Nargess, Randle, Michael, Ramamoorthy, Harihara, He, Guanchen, Somphonsane, Ratchanok, Matsumoto, Naoki, Sakanashi, Kohei, Kida, Michio, Aoki, Nobuyuki, Jin, Zhi, Kim, Yunseob, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Bird, Jonathan P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648290/
https://www.ncbi.nlm.nih.gov/pubmed/31459617
http://dx.doi.org/10.1021/acsomega.8b03259

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648290/
https://www.ncbi.nlm.nih.gov/pubmed/31459617
http://dx.doi.org/10.1021/acsomega.8b03259

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