Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon

[Image: see text] Self-assembled molecular monolayer (SAMM) doping on semiconductors has been widely appraised for its advantages of doping nanoelectronic devices for applications in the complementary metal-oxide-semiconductor transistor (CMOS) industry. However, defects introduced by SAMM-doping wi...

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Detalles Bibliográficos
Autores principales: Gao, Xuejiao, Guan, Bin, Mesli, Abdelmadjid, Chen, Kaixiang, Sun, Limin, Dan, Yaping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648394/
https://www.ncbi.nlm.nih.gov/pubmed/31459568
http://dx.doi.org/10.1021/acsomega.8b03372

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648394/
https://www.ncbi.nlm.nih.gov/pubmed/31459568
http://dx.doi.org/10.1021/acsomega.8b03372

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