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Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers

[Image: see text] Operando analysis of electron devices provides key information regarding their performance enhancement, reliability, thermal management, etc. For versatile operando analysis of devices, the nitrogen-vacancy (NV) centers in diamonds are potentially useful media owing to their excell...

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Autores principales: Uchiyama, Haruki, Saijo, Soya, Kishimoto, Shigeru, Ishi-Hayase, Junko, Ohno, Yutaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648530/
https://www.ncbi.nlm.nih.gov/pubmed/31459842
http://dx.doi.org/10.1021/acsomega.9b00344
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author Uchiyama, Haruki
Saijo, Soya
Kishimoto, Shigeru
Ishi-Hayase, Junko
Ohno, Yutaka
author_facet Uchiyama, Haruki
Saijo, Soya
Kishimoto, Shigeru
Ishi-Hayase, Junko
Ohno, Yutaka
author_sort Uchiyama, Haruki
collection PubMed
description [Image: see text] Operando analysis of electron devices provides key information regarding their performance enhancement, reliability, thermal management, etc. For versatile operando analysis of devices, the nitrogen-vacancy (NV) centers in diamonds are potentially useful media owing to their excellent sensitivity to multiple physical parameters. However, in single crystal diamond substrates often used for sensing applications, placing NV centers in contiguity with the active channel is difficult. This study proposes an operando analysis method using a nanodiamond thin film that can be directly formed onto various electron devices by a simple solution-based process. The results of noise analysis of luminescence of the NV centers in nanodiamonds show that the signal-to-noise ratio in optically detected magnetic resonance can be drastically improved by excluding the large 1/f noise of nanodiamonds. Consequently, the magnetic field and increase in temperature caused by the device current could be simultaneously measured in a lithographically fabricated metal microwire as a test device. Moreover, the spatial mapping measurement is demonstrated and shows a similar profile with the numerical calculation.
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spelling pubmed-66485302019-08-27 Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers Uchiyama, Haruki Saijo, Soya Kishimoto, Shigeru Ishi-Hayase, Junko Ohno, Yutaka ACS Omega [Image: see text] Operando analysis of electron devices provides key information regarding their performance enhancement, reliability, thermal management, etc. For versatile operando analysis of devices, the nitrogen-vacancy (NV) centers in diamonds are potentially useful media owing to their excellent sensitivity to multiple physical parameters. However, in single crystal diamond substrates often used for sensing applications, placing NV centers in contiguity with the active channel is difficult. This study proposes an operando analysis method using a nanodiamond thin film that can be directly formed onto various electron devices by a simple solution-based process. The results of noise analysis of luminescence of the NV centers in nanodiamonds show that the signal-to-noise ratio in optically detected magnetic resonance can be drastically improved by excluding the large 1/f noise of nanodiamonds. Consequently, the magnetic field and increase in temperature caused by the device current could be simultaneously measured in a lithographically fabricated metal microwire as a test device. Moreover, the spatial mapping measurement is demonstrated and shows a similar profile with the numerical calculation. American Chemical Society 2019-04-24 /pmc/articles/PMC6648530/ /pubmed/31459842 http://dx.doi.org/10.1021/acsomega.9b00344 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Uchiyama, Haruki
Saijo, Soya
Kishimoto, Shigeru
Ishi-Hayase, Junko
Ohno, Yutaka
Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title_full Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title_fullStr Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title_full_unstemmed Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title_short Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy Centers
title_sort operando analysis of electron devices using nanodiamond thin films containing nitrogen-vacancy centers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6648530/
https://www.ncbi.nlm.nih.gov/pubmed/31459842
http://dx.doi.org/10.1021/acsomega.9b00344
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