Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

[Image: see text] In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al(2)O(3)), titanium oxide (TiO(2)), and hafnium oxide (HfO(2)) have been test...

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Detalles Bibliográficos
Autores principales: Giambra, Marco A., Benfante, Antonio, Pernice, Riccardo, Miseikis, Vaidotas, Fabbri, Filippo, Reitz, Christian, Pernice, Wolfram H. P., Krupke, Ralph, Calandra, Enrico, Stivala, Salvatore, Busacca, Alessandro C., Danneau, Romain
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6649291/
https://www.ncbi.nlm.nih.gov/pubmed/31459467
http://dx.doi.org/10.1021/acsomega.8b02836

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6649291/
https://www.ncbi.nlm.nih.gov/pubmed/31459467
http://dx.doi.org/10.1021/acsomega.8b02836

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