Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Basal plane dislocations (BPDs) in 4H silicon carbide (SiC) crystals grown using the physical vapor transport (PVT) method are diminishing the performance of SiC-based power electronic devices such as pn-junction diodes or MOSFETs. Therefore, understanding the generation and movement of BPDs is cruc...

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Detalles Bibliográficos
Autores principales: Steiner, Johannes, Roder, Melissa, Nguyen, Binh Duong, Sandfeld, Stefan, Danilewsky, Andreas, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651520/
https://www.ncbi.nlm.nih.gov/pubmed/31323918
http://dx.doi.org/10.3390/ma12132207

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651520/
https://www.ncbi.nlm.nih.gov/pubmed/31323918
http://dx.doi.org/10.3390/ma12132207

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