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Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment

Hierarchical Temporal Memory (HTM) has been known as a software framework to model the brain’s neocortical operation. However, mimicking the brain’s neocortical operation by not software but hardware is more desirable, because the hardware can not only describe the neocortical operation, but can als...

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Autores principales: Nguyen, Tien Van, Pham, Khoa Van, Min, Kyeong-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651624/
https://www.ncbi.nlm.nih.gov/pubmed/31266255
http://dx.doi.org/10.3390/ma12132122
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author Nguyen, Tien Van
Pham, Khoa Van
Min, Kyeong-Sik
author_facet Nguyen, Tien Van
Pham, Khoa Van
Min, Kyeong-Sik
author_sort Nguyen, Tien Van
collection PubMed
description Hierarchical Temporal Memory (HTM) has been known as a software framework to model the brain’s neocortical operation. However, mimicking the brain’s neocortical operation by not software but hardware is more desirable, because the hardware can not only describe the neocortical operation, but can also employ the brain’s architectural advantages. To develop a hybrid circuit of memristor and Complementary Metal-Oxide-Semiconductor (CMOS) for realizing HTM’s spatial pooler (SP) by hardware, memristor defects such as stuck-at-faults and variations should be considered. For solving the defect problem, we first show that the boost-factor adjustment can make HTM’s SP defect-tolerant, because the false activation of defective columns are suppressed. Second, we propose a memristor-CMOS hybrid circuit with the boost-factor adjustment to realize this defect-tolerant SP by hardware. The proposed circuit does not rely on the conventional defect-aware mapping scheme, which cannot avoid the false activation of defective columns. For the Modified subset of National Institute of Standards and Technology (MNIST) vectors, the boost-factor adjusted crossbar with defects = 10% shows a rate loss of only ~0.6%, compared to the ideal crossbar with defects = 0%. On the contrary, the defect-aware mapping without the boost-factor adjustment demonstrates a significant rate loss of ~21.0%. The energy overhead of the boost-factor adjustment is only ~0.05% of the programming energy of memristor synapse crossbar.
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spelling pubmed-66516242019-08-08 Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment Nguyen, Tien Van Pham, Khoa Van Min, Kyeong-Sik Materials (Basel) Article Hierarchical Temporal Memory (HTM) has been known as a software framework to model the brain’s neocortical operation. However, mimicking the brain’s neocortical operation by not software but hardware is more desirable, because the hardware can not only describe the neocortical operation, but can also employ the brain’s architectural advantages. To develop a hybrid circuit of memristor and Complementary Metal-Oxide-Semiconductor (CMOS) for realizing HTM’s spatial pooler (SP) by hardware, memristor defects such as stuck-at-faults and variations should be considered. For solving the defect problem, we first show that the boost-factor adjustment can make HTM’s SP defect-tolerant, because the false activation of defective columns are suppressed. Second, we propose a memristor-CMOS hybrid circuit with the boost-factor adjustment to realize this defect-tolerant SP by hardware. The proposed circuit does not rely on the conventional defect-aware mapping scheme, which cannot avoid the false activation of defective columns. For the Modified subset of National Institute of Standards and Technology (MNIST) vectors, the boost-factor adjusted crossbar with defects = 10% shows a rate loss of only ~0.6%, compared to the ideal crossbar with defects = 0%. On the contrary, the defect-aware mapping without the boost-factor adjustment demonstrates a significant rate loss of ~21.0%. The energy overhead of the boost-factor adjustment is only ~0.05% of the programming energy of memristor synapse crossbar. MDPI 2019-07-01 /pmc/articles/PMC6651624/ /pubmed/31266255 http://dx.doi.org/10.3390/ma12132122 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Nguyen, Tien Van
Pham, Khoa Van
Min, Kyeong-Sik
Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title_full Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title_fullStr Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title_full_unstemmed Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title_short Hybrid Circuit of Memristor and Complementary Metal-Oxide-Semiconductor for Defect-Tolerant Spatial Pooling with Boost-Factor Adjustment
title_sort hybrid circuit of memristor and complementary metal-oxide-semiconductor for defect-tolerant spatial pooling with boost-factor adjustment
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6651624/
https://www.ncbi.nlm.nih.gov/pubmed/31266255
http://dx.doi.org/10.3390/ma12132122
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