Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...

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Detalles Bibliográficos
Autores principales: Schuh, Philipp, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6652129/
https://www.ncbi.nlm.nih.gov/pubmed/31284618
http://dx.doi.org/10.3390/ma12132179

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6652129/
https://www.ncbi.nlm.nih.gov/pubmed/31284618
http://dx.doi.org/10.3390/ma12132179

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