Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...

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Autores principales: Schuh, Philipp, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6652129/
https://www.ncbi.nlm.nih.gov/pubmed/31284618
http://dx.doi.org/10.3390/ma12132179
_version_ 1783438505131638784
author Schuh, Philipp
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
author_facet Schuh, Philipp
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
author_sort Schuh, Philipp
collection PubMed
description We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.
format Online
Article
Text
id pubmed-6652129
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-66521292019-08-07 Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth Schuh, Philipp La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. Materials (Basel) Article We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress. MDPI 2019-07-06 /pmc/articles/PMC6652129/ /pubmed/31284618 http://dx.doi.org/10.3390/ma12132179 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Schuh, Philipp
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title_full Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title_fullStr Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title_full_unstemmed Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title_short Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
title_sort growth of large-area, stress-free, and bulk-like 3c-sic (100) using 3c-sic-on-si in vapor phase growth
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6652129/
https://www.ncbi.nlm.nih.gov/pubmed/31284618
http://dx.doi.org/10.3390/ma12132179
work_keys_str_mv AT schuhphilipp growthoflargeareastressfreeandbulklike3csic100using3csiconsiinvaporphasegrowth
AT laviafrancesco growthoflargeareastressfreeandbulklike3csic100using3csiconsiinvaporphasegrowth
AT maucerimarco growthoflargeareastressfreeandbulklike3csic100using3csiconsiinvaporphasegrowth
AT zielinskimarcin growthoflargeareastressfreeandbulklike3csic100using3csiconsiinvaporphasegrowth
AT wellmannpeterj growthoflargeareastressfreeandbulklike3csic100using3csiconsiinvaporphasegrowth

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