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Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6652129/ https://www.ncbi.nlm.nih.gov/pubmed/31284618 http://dx.doi.org/10.3390/ma12132179 |