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Gallium arsenide solar cells grown at rates exceeding 300 µm h(−1) by hydride vapor phase epitaxy
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h(−1) using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demons...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6659644/ https://www.ncbi.nlm.nih.gov/pubmed/31350402 http://dx.doi.org/10.1038/s41467-019-11341-3 |