Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications

AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irrad...

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Detalles Bibliográficos
Autores principales: Lin, H. K., Huang, Y. J., Shih, W. C., Chen, Y. C., Chang, W. T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2019
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/
https://www.ncbi.nlm.nih.gov/pubmed/31384778
http://dx.doi.org/10.1186/s13065-019-0550-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/
https://www.ncbi.nlm.nih.gov/pubmed/31384778
http://dx.doi.org/10.1186/s13065-019-0550-6

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