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Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irrad...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer International Publishing
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/ https://www.ncbi.nlm.nih.gov/pubmed/31384778 http://dx.doi.org/10.1186/s13065-019-0550-6 |
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author | Lin, H. K. Huang, Y. J. Shih, W. C. Chen, Y. C. Chang, W. T. |
author_facet | Lin, H. K. Huang, Y. J. Shih, W. C. Chen, Y. C. Chang, W. T. |
author_sort | Lin, H. K. |
collection | PubMed |
description | AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength. |
format | Online Article Text |
id | pubmed-6661789 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Springer International Publishing |
record_format | MEDLINE/PubMed |
spelling | pubmed-66617892019-08-05 Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications Lin, H. K. Huang, Y. J. Shih, W. C. Chen, Y. C. Chang, W. T. BMC Chem Research Article AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength. Springer International Publishing 2019-03-16 /pmc/articles/PMC6661789/ /pubmed/31384778 http://dx.doi.org/10.1186/s13065-019-0550-6 Text en © The Author(s) 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The Creative Commons Public Domain Dedication waiver (http://creativecommons.org/publicdomain/zero/1.0/) applies to the data made available in this article, unless otherwise stated. |
spellingShingle | Research Article Lin, H. K. Huang, Y. J. Shih, W. C. Chen, Y. C. Chang, W. T. Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title | Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title_full | Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title_fullStr | Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title_full_unstemmed | Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title_short | Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications |
title_sort | crystalline characteristics of annealed aln films by pulsed laser treatment for solidly mounted resonator applications |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/ https://www.ncbi.nlm.nih.gov/pubmed/31384778 http://dx.doi.org/10.1186/s13065-019-0550-6 |
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