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Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications

AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irrad...

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Autores principales: Lin, H. K., Huang, Y. J., Shih, W. C., Chen, Y. C., Chang, W. T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/
https://www.ncbi.nlm.nih.gov/pubmed/31384778
http://dx.doi.org/10.1186/s13065-019-0550-6
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author Lin, H. K.
Huang, Y. J.
Shih, W. C.
Chen, Y. C.
Chang, W. T.
author_facet Lin, H. K.
Huang, Y. J.
Shih, W. C.
Chen, Y. C.
Chang, W. T.
author_sort Lin, H. K.
collection PubMed
description AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength.
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spelling pubmed-66617892019-08-05 Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications Lin, H. K. Huang, Y. J. Shih, W. C. Chen, Y. C. Chang, W. T. BMC Chem Research Article AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength. Springer International Publishing 2019-03-16 /pmc/articles/PMC6661789/ /pubmed/31384778 http://dx.doi.org/10.1186/s13065-019-0550-6 Text en © The Author(s) 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The Creative Commons Public Domain Dedication waiver (http://creativecommons.org/publicdomain/zero/1.0/) applies to the data made available in this article, unless otherwise stated.
spellingShingle Research Article
Lin, H. K.
Huang, Y. J.
Shih, W. C.
Chen, Y. C.
Chang, W. T.
Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title_full Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title_fullStr Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title_full_unstemmed Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title_short Crystalline characteristics of annealed AlN films by pulsed laser treatment for solidly mounted resonator applications
title_sort crystalline characteristics of annealed aln films by pulsed laser treatment for solidly mounted resonator applications
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6661789/
https://www.ncbi.nlm.nih.gov/pubmed/31384778
http://dx.doi.org/10.1186/s13065-019-0550-6
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