Cargando…
Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for...
Autores principales: | Whiteley, S. J., Heremans, F. J., Wolfowicz, G., Awschalom, D. D., Holt, M. V. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6662806/ https://www.ncbi.nlm.nih.gov/pubmed/31358776 http://dx.doi.org/10.1038/s41467-019-11365-9 |
Ejemplares similares
-
Electrometry by optical charge conversion of deep defects in 4H-SiC
por: Wolfowicz, G., et al.
Publicado: (2018) -
Optical charge state control of spin defects in 4H-SiC
por: Wolfowicz, Gary, et al.
Publicado: (2017) -
Correlative microscopy approach for biology using X-ray holography, X-ray scanning diffraction and STED microscopy
por: Bernhardt, M., et al.
Publicado: (2018) -
Vanadium spin qubits as telecom quantum emitters in silicon carbide
por: Wolfowicz, Gary, et al.
Publicado: (2020) -
Stroboscopic Training Enhances Anticipatory Timing
por: SMITH, TREVOR Q., et al.
Publicado: (2012)