GFET Asymmetric Transfer Response Analysis through Access Region Resistances

Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentra...

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Detalles Bibliográficos
Autores principales: Toral-Lopez, Alejandro, Marin, Enrique G., Pasadas, Francisco, Gonzalez-Medina, Jose Maria, Ruiz, Francisco G., Jiménez, David, Godoy, Andres
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669451/
https://www.ncbi.nlm.nih.gov/pubmed/31323809
http://dx.doi.org/10.3390/nano9071027

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669451/
https://www.ncbi.nlm.nih.gov/pubmed/31323809
http://dx.doi.org/10.3390/nano9071027

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