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GFET Asymmetric Transfer Response Analysis through Access Region Resistances
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene field-effect transistors (GFETs) with enhanced RF performance have attracted significant experimental efforts, mainly concentra...
Autores principales: | Toral-Lopez, Alejandro, Marin, Enrique G., Pasadas, Francisco, Gonzalez-Medina, Jose Maria, Ruiz, Francisco G., Jiménez, David, Godoy, Andres |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669451/ https://www.ncbi.nlm.nih.gov/pubmed/31323809 http://dx.doi.org/10.3390/nano9071027 |
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