Effect of Piezoresistive Behavior on Electron Emission from Individual Silicon Carbide Nanowire

The excellent properties of silicon carbide (SiC) make it widely applied in high-voltage, high-power, and high-temperature electronic devices. SiC nanowires combine the excellent physical properties of SiC material and the advantages of nanoscale structures, thus attracting significant attention fro...

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Detalles Bibliográficos
Autores principales: Zhao, Peng, Zhang, Yu, Tang, Shuai, Zhan, Runze, She, Juncong, Chen, Jun, Xu, Ningsheng, Deng, Shaozhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669601/
https://www.ncbi.nlm.nih.gov/pubmed/31284558
http://dx.doi.org/10.3390/nano9070981

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669601/
https://www.ncbi.nlm.nih.gov/pubmed/31284558
http://dx.doi.org/10.3390/nano9070981

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