Synthesis, Characterization and Fabrication of Graphene/Boron Nitride Nanosheets Heterostructure Tunneling Devices

Various types of 2D/2D prototype devices based on graphene (G) and boron nitride nanosheets (BNNS) were fabricated to study the charge tunneling phenomenon pertinent to vertical transistors for digital and high frequency electronics. Specifically, G/BNNS/metal, G/SiO(2), and G/BNNS/SiO(2) heterostru...

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Detalles Bibliográficos
Autores principales: Sajjad, Muhammad, Makarov, Vladimir, Mendoza, Frank, Sultan, Muhammad S., Aldalbahi, Ali, Feng, Peter X., Jadwisienczak, Wojciech M., Weiner, Brad R., Morell, Gerardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Concept Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669619/
https://www.ncbi.nlm.nih.gov/pubmed/31252619
http://dx.doi.org/10.3390/nano9070925

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669619/
https://www.ncbi.nlm.nih.gov/pubmed/31252619
http://dx.doi.org/10.3390/nano9070925

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